PROPERTIES OF PLATINUM-ASSOCIATED DEEP LEVELS IN SILICON

被引：59

作者：

KWON, YK

ISHIKAWA, T

KUWANO, H

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 03期

关键词：

D O I：

10.1063/1.338197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1055 / 1058

页数：4

共 11 条

[1]

BRAUN S, 1977, J APPL PHYS, V48, P3383

[2] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON [J].

BROTHERTON, SD ;

BRADLEY, P ;

BICKNELL, J .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) :3396-3403

[3] ELECTRICAL PROPERTIES OF SILICON DOPED WITH PLATINUM [J].

CARCHANO, H ;

JUND, C .

SOLID-STATE ELECTRONICS, 1970, 13 (01) :83-&

[4]

Conti M., 1971, Alta Frequenza, V40, P544

[5] ELECTRICAL-PROPERTIES OF PLATINUM IN SILICON AS DETERMINED BY DEEP-LEVEL TRANSIENT SPECTROSCOPY [J].

EVWARAYE, AO ;

SUN, E .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3172-3176

[6]

GOESELE U, 1980, APPL PHYS, V23, P361

[7] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[8] ENERGY-LEVELS AND CONCENTRATIONS FOR PLATINUM IN SILICON [J].

LISIAK, KP ;

MILNES, AG .

SOLID-STATE ELECTRONICS, 1975, 18 (06) :533-540

[9] PROPERTIES OF AU, PT, PD AND RH LEVELS IN SILICON MEASURED WITH A CONSTANT CAPACITANCE TECHNIQUE [J].

PALS, JA .

SOLID-STATE ELECTRONICS, 1974, 17 (11) :1139-1145

[10] SPIN RESONANCE OF PD AND PT IN SILICON [J].

WOODBURY, HH ;

LUDWIG, GW .

PHYSICAL REVIEW, 1962, 126 (02) :466-&

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