PREPARATION AND PROPERTIES OF VANADIUM DIOXIDE THERMOCHROMIC THIN-FILMS

被引:9
作者
KHAN, KA
KHAN, MSR
机构
[1] Department of Applied Physics and Electronics, University of Rajshahi, Rajshahi
来源
PRAMANA-JOURNAL OF PHYSICS | 1992年 / 38卷 / 04期
关键词
SPUTTERING; VANADIUM DIOXIDE; THERMOCHROMISM;
D O I
10.1007/BF02875386
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Deposition of vanadium dioxide and the study of its electrical and optical properties at varying deposition conditions have been presented. The materials have been deposited by reactive r.f. magnetron sputtering technique in Ar, O2 ambient followed by annealing post-treatment. Electrical conductivity measurements indicate that oxygen pressure plays an important role in obtaining VO2 and at P(O2) = 2.4% stoichiometric VO2 can be obtained. The deposition rate of oxides decreases with increasing O2 pressure and the rate of VO2 was about 130 angstrom/min. Optical studies show that VO2 films exhibit thermochromism and it has the potential application for energy efficient solar energy utilization.
引用
收藏
页码:389 / 396
页数:8
相关论文
共 24 条
[1]   MECHANISMS FOR METAL-NONMETAL TRANSITIONS IN TRANSITION-METAL OXIDES AND SULFIDES [J].
ADLER, D .
REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :714-+
[2]  
BABULANAM SM, 1987, SOL ENERG MATER, V16, P374
[3]  
BORISOV BS, 1971, FIZ TVERD TELA+, V12, P1763
[4]  
Bugayev A. A., 1986, Semiconductor physics, P265
[5]  
CHUDNOVSKII FA, 1975, ZH TEKH FIZ+, V45, P1561
[6]  
CHUDNOVSKII FA, 1976, SOV PHYS-TECH PHYS, V20, P9991
[7]   RF AND DC REACTIVE SPUTTERING FOR CRYSTALLINE AND AMORPHOUS VO2 THIN-FILM DEPOSITION [J].
DUCHENE, J ;
TERRAILLON, M ;
PAILLY, M .
THIN SOLID FILMS, 1972, 12 (02) :231-+
[8]   INFRARED OPTICAL-PROPERTIES OF SILICON OXYNITRIDE FILMS - EXPERIMENTAL-DATA AND THEORETICAL INTERPRETATION [J].
ERIKSSON, TS ;
GRANQVIST, CG .
JOURNAL OF APPLIED PHYSICS, 1986, 60 (06) :2081-2091
[9]   REACTIVELY SPUTTERED VANADIUM DIOXIDE THIN FILMS [J].
FULS, EN ;
HENSLER, DH ;
ROSS, AR .
APPLIED PHYSICS LETTERS, 1967, 10 (07) :199-&
[10]  
Goodenough J., 1971, PROG SOLID STATE CH, V5, P145, DOI DOI 10.1016/0079-6786(71)90018-5