SURFACE PREPARATION AND CHARACTERIZATION BY SPECTROELLIPSOMETRY - APPLICATION TO (100)GAAS

[1] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318

[2] OPTICAL-PROPERTIES OF THIN-FILMS [J]. THIN SOLID FILMS, 1982, 89 (03) : 249 - 262

[3] ASPNES DE, 1983, J PHYS C SOLID STATE, V10, P3

[4] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[5] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[6] ANALYSIS OF ION-IMPLANTED GAAS BY SPECTROSCOPIC ELLIPSOMETRY [J]. SURFACE SCIENCE, 1983, 135 (1-3) : 353 - 373

[7] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[8] OPTICAL EXAMINATION AND MONITORING OF SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1979, 2 (04): : 445 - 501

[9] Van Muylder J, 1974, ATLAS ELECTROCHEMICA, P516

[10] VANLEUGENHAGHE C, 1974, ATLAS ELECTROCHEMICA, P516

[1] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318

[2] OPTICAL-PROPERTIES OF THIN-FILMS [J]. THIN SOLID FILMS, 1982, 89 (03) : 249 - 262

[3] ASPNES DE, 1983, J PHYS C SOLID STATE, V10, P3

[4] Azzam RMA, 1977, ELLIPSOMETRY POLARIZ

[5] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[6] ANALYSIS OF ION-IMPLANTED GAAS BY SPECTROSCOPIC ELLIPSOMETRY [J]. SURFACE SCIENCE, 1983, 135 (1-3) : 353 - 373

[7] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433

[8] OPTICAL EXAMINATION AND MONITORING OF SURFACES [J]. APPLICATIONS OF SURFACE SCIENCE, 1979, 2 (04): : 445 - 501

[9] Van Muylder J, 1974, ATLAS ELECTROCHEMICA, P516

[10] VANLEUGENHAGHE C, 1974, ATLAS ELECTROCHEMICA, P516