MONTE-CARLO SIMULATIONS OF HOT-ELECTRON SPECTROSCOPY IN PLANAR-DOPED BARRIER TRANSISTORS

被引：18

作者：

WANG, T

HESS, K

IAFRATE, GJ

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] USA,ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.336349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2125 / 2128

页数：4

共 17 条

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[9] A PROPOSAL AND NUMERICAL-SIMULATION OF N+NN+ SCHOTTKY DEVICE FOR BALLISTIC AND QUASI-BALLISTIC ELECTRON-SPECTROSCOPY [J].

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[10]

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