METALORGANIC CHEMICAL VAPOR-DEPOSITION ROUTE TO EPITAXIAL NEODYMIUM GALLATE THIN-FILMS

被引：15

作者：

HAN, B ^{[1
]}

NEUMAYER, D ^{[1
]}

SCHULZ, DL ^{[1
]}

MARKS, TJ ^{[1
]}

ZHANG, H ^{[1
]}

DRAVID, VP ^{[1
]}

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60208

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 25期

关键词：

D O I：

10.1063/1.108005

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Phase-pure epitaxial thin films of the YBa2Cu3O7-delta lattice-matched, low dielectric loss perovskite insulator NdGaO3 have been grown on (110) LaAlO3 substrates by a metalorganic chemical vapor deposition (MOCVD)/post-annealing process. Amorphous Nd-Ga-O films are first prepared by MOCVD using the volatile metalorganic beta-diketonate precursors Nd(dpm)3 and Ga(dpm)3 (dpm=dipivaloylmethanate). Subsequent postannealing affords phase pure, highly oriented [(001) and/or (110) orientations perpendicular to the substrate surface] and epitaxial NdGaO3 films as assessed by x-ray diffraction theta-2theta, omega, and phi scans. Cross-sectional high-resolution electron microscopic images show that the epitaxial growth occurs with atomically abrupt film-substrate interfaces and with coexisting NdGaO3 (001) and (110) orientation domains.

引用

页码：3047 / 3049

页数：3