A FAST-RESPONSE EBIC SYSTEM

被引:1
作者
ROSSOUW, CJ
MAHER, FJ
PANJKOV, AA
机构
来源
AUSTRALIAN JOURNAL OF PHYSICS | 1983年 / 36卷 / 04期
关键词
D O I
10.1071/PH830565
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:565 / 572
页数:8
相关论文
共 15 条
[1]   HIGH-SPEED CURRENT MEASUREMENTS [J].
CATH, PG ;
PEABODY, AM .
ANALYTICAL CHEMISTRY, 1971, 43 (11) :A91-&
[2]   AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .2. EBIC IMAGES OF DISLOCATIONS [J].
DONOLATO, C .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 66 (02) :445-454
[3]  
EHRENBERG W, 1981, ELECTRON BOMBARDMENT, P294
[4]   EVALUATION OF PASSIVATED INTEGRATED CIRCUITS USING THE SCANNING ELECTRON MICROSCOPE [J].
EVERHART, TE ;
WELLS, OC ;
MATTA, RK .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (08) :929-936
[5]   DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].
EVERHART, TE ;
HOFF, PH .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&
[6]  
GEDCKE DA, 1978, SCANNING ELECTRON MI, V1, P581
[7]  
Gonzales A. J., 1974, Scanning Electron Microscopy 1974, P941
[8]   DIFFUSION LENGTH EVALUATION OF BORON-IMPLANTED SILICON USING THE SEM-EBIC-SCHOTTKY DIODE TECHNIQUE [J].
IOANNOU, DE ;
DAVIDSON, SM .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1979, 12 (08) :1339-1344
[9]  
LEAMY HJ, 1978, SCANNING ELECTRON MI, V1, P717
[10]  
MAHER FJ, 1983, J PHYS E