PROXIMITY EFFECT IN BULK AND SURFACE INVERSION LAYER OF INAS AND ITS APPLICATION TO SUPERCONDUCTING TRANSISTORS

被引：5

作者：

KAWAKAMI, T

TAKAYANAGI, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1987年 / 26卷

关键词：

D O I：

10.7567/JJAPS.26S3.2059

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2059 / 2064

页数：6

共 32 条

[1] FEASIBILITY OF HYBRID JOSEPHSON FIELD-EFFECT TRANSISTORS [J].

CLARK, TD ;

PRANCE, RJ ;

GRASSIE, ADC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2736-2743

[2] SUPERCURRENTS IN LEAD-COPPER-LEAD SANDWICHES [J].

CLARKE, J .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 308 (1495) :447-&

[3]

de Gennes P. G., 1966, SUPERCONDUCTIVITY ME

[4] ANDERSON LOCALIZATION AND PROXIMITY EFFECT [J].

FUKUYAMA, H ;

MAEKAWA, S .

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1986, 55 (06) :1814-1817

[5] MAGNETIC PROPERTIES OF INAS DIODE ELECTROLUMINESCENCE [J].

GALEENER, FL ;

MELNGAIL.I ;

WRIGHT, GB ;

REDIKER, RH .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1574-&

[6] JOSEPHSON TUNNELING THROUGH LOCALLY THINNED SILICON WAFERS [J].

HUANG, CL ;

VANDUZER, T .

APPLIED PHYSICS LETTERS, 1974, 25 (12) :753-756

[7] 3-TERMINAL OPERATION OF INAS-COUPLED JOSEPHSON DEVICES BY QUASIPARTICLE INJECTION [J].

INOUE, K ;

KAWAKAMI, T .

ELECTRONICS LETTERS, 1985, 21 (20) :918-920

[8]

INOUE K, 1987, 18 INT C LOW TEMP PH

[9] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES [J].

KAJIYAMA, K ;

MIZUSHIMA, Y ;

SAKATA, S .

APPLIED PHYSICS LETTERS, 1973, 23 (08) :458-459

[10] ELECTRIC FIELD EFFECT ON MAGNETORESISTANCE OF INDIUM ARSENIDE SURFACES IN HIGH MAGNETIC FIELDS [J].

KAWAJI, S ;

GATOS, HC .

SURFACE SCIENCE, 1967, 7 (02) :215-&

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