EFFECTS OF DOPING LEVELS AT SOURCE AND DRAIN REGIONS ON THE PERFORMANCE OF A-SI FET

被引：1

作者：

KATOH, K ^{[1
]}

IMAGI, S ^{[1
]}

WATANABE, H ^{[1
]}

机构：

[1] SENDAI NATL COLL TECHNOL,KAMI,MIYAGI 98931,JAPAN

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 25-2期

关键词：

D O I：

10.1049/el:19840727

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1064 / 1065

页数：2

共 9 条

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[4]

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[5]

OKUBO Y, 1982, SID 82 DIGEST, P40

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SHUR, M ;

HACK, M .

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[7] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN ADDRESSABLE LIQUID-CRYSTAL DISPLAY PANELS [J].

SNELL, AJ ;

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HUGHES, AJ .

APPLIED PHYSICS, 1981, 24 (04) :357-362

[8] AMORPHOUS-SILICON TFT ARRAY FOR LCD ADDRESSING [J].

STROOMER, MVC ;

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[9]

SUZUKI K, 1983, SID 83, P146

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