PLASMA-ENHANCED DEPOSITION OF SILICON-NITRIDE FROM SIH4-N2 MIXTURE

被引：17

作者：

KATOH, K ^{[1
]}

YASUI, M ^{[1
]}

WATANABE, H ^{[1
]}

机构：

[1] SENDAI RADIO TECH COLL,MIYAGI 98931,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 05期

关键词：

D O I：

10.1143/JJAP.22.L321

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L321 / L323

页数：3

共 12 条

[1] HYDROGEN CONTENT OF A VARIETY OF PLASMA-DEPOSITED SILICON NITRIDES
CHOW, R
LANFORD, WA
WANG, KM
ROSLER, RS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5630 - 5633
[2] MECHANISMS OF PLASMA-ENHANCED SILICON-NITRIDE DEPOSITION USING SIH4-N2 MIXTURE
DUN, H
PAN, P
WHITE, FR
DOUSE, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (07) : 1555 - 1563
[3] REACTIONS OF ATOMIC-HYDROGEN IN THE DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON BY GLOW-DISCHARGE AND REACTIVE SPUTTERING
KAMPAS, FJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6408 - 6412
[4] AMORPHOUS-SILICON SILICON-NITRIDE FIELD-EFFECT TRANSISTORS
KATOH, K
YASUI, M
WATANABE, H
[J]. ELECTRONICS LETTERS, 1982, 18 (14) : 599 - 600
[5] SOME PROPERTIES OF SILICON NITRIDE FILMS PRODUCED BY RADIO FREQUENCY GLOW DISCHARGE REACTION OF SILANE AND NITROGEN
KUWANO, Y
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1969, 8 (07) : 876 - &
[6] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION
LECOMBER, PG
SPEAR, WE
GHAITH, A
[J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181
[7] ELECTRICAL-PROPERTIES AND THEIR THERMAL-STABILITY FOR SILICON-NITRIDE FILMS PREPARED BY PLASMA-ENHANCED DEPOSITION
MAEDA, M
ARITA, Y
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : 6852 - 6856
[8] MAR KM, 1980, SOLID STATE TECHNOL, V23, P137
[9] AMORPHOUS SILICON-SILICON NITRIDE THIN-FILM TRANSISTORS
POWELL, MJ
EASTON, BC
HILL, OF
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (10) : 794 - 796
[10] APPLICATION OF AMORPHOUS-SILICON FIELD-EFFECT TRANSISTORS IN INTEGRATED-CIRCUITS
SNELL, AJ
SPEAR, WE
LECOMBER, PG
MACKENZIE, K
[J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1981, 26 (02): : 83 - 86

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