ELECTRON-MOBILITY IN HEAVILY DOPED AND COMPENSATED GALLIUM-ARSENIDE DUE TO SCATTERING BY POTENTIAL FLUCTUATIONS

被引：8

作者：

YANCHEV, IY

EVTIMOVA, SK

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 14期

关键词：

D O I：

10.1088/0022-3719/18/14/005

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L377 / L381

页数：5

共 18 条

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