COMPARISON OF DRAIN STRUCTURES IN N-CHANNEL MOSFETS

被引：24

作者：

MIKOSHIBA, H

HORIUCHI, T

HAMANO, K

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1986.22450

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：140 / 144

页数：5

共 7 条

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GRINOLDS, HR
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) : 71 - 74
[3] Matsumoto Y., 1983, International Electron Devices Meeting 1983. Technical Digest, P392
[4] Ogura S., 1981, International Electron Devices Meeting, P651
[5] SUBMICROMETER MOSFET STRUCTURE FOR MINIMIZING HOT-CARRIER GENERATION
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ASAI, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (04) : 611 - 618
[6] AN EMPIRICAL-MODEL FOR DEVICE DEGRADATION DUE TO HOT-CARRIER INJECTION
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[J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (04) : 111 - 113
[7] AN AS-P(N+-N-) DOUBLE DIFFUSED DRAIN MOSFET FOR VLSIS
TAKEDA, E
KUME, H
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MAKINO, T
SHIMIZU, A
ASAI, S
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (06) : 652 - 657