HIGH-TEMPERATURE PERFORMANCE OF GA0.51IN0.49P/IN0.2GA0.8AS PSEUDOMORPHIC HEMTS WITH WSIX GATES

被引：1

作者：

CHAN, YJ ^{[1
]}

YEH, TJ ^{[1
]}

KUO, JM ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1995年 / 38卷 / 02期

关键词：

D O I：

10.1016/0038-1101(94)E0075-P

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

WSix gate pseudomorphic GaInP/In0.2Ga0.8As HEMTs were fabricated, and evaluated for the purposes of high temperature operations. Based on the high thermal stability of WSi, gates, no significant change in device characteristics was observed for temperatures up to 200 degrees C. Functional devices can still be obtained at 300 degrees C. Comparing with the other gate materials, for example Ti/Au or Al gates, WSix demonstrates the advantages of this highly thermal stable property.

引用

页码：457 / 459

页数：3

共 6 条

[1] GA0.51IN0.49P/GAAS HEMTS EXHIBITING GOOD ELECTRICAL PERFORMANCE AT CRYOGENIC TEMPERATURES [J].