EFFECT OF ION-BEAM MIXING ON THE EVOLUTION OF ARSENIC FROM THE AU-GAAS SYSTEM

Gold and gold-based alloys are frequently used as contact materials to GaAs. The contact technology involves high temperature heat treatment. This temperature can be decreased using low dose ion beam mixing to break up the contaminating layer at the interface before annealing. The contact thus formed is more uniform and the gold does not penetrate so deep as in the non-implanted case. In this study a comparison of the arsenic loss from non-implanted and 700 keV 10**1**4Xe**2** plus cm**2 pre-implanted 40 nm Au-GaAs structures is presented. In investigating the interdiffusion of Au and GaAs by Rutherford backscattering spectrometry, different mechanisms were found for the two cases. 4 Refs.