COMPARATIVE MASS-SPECTROMETRIC STUDY OF AIII-BV COMPOUNDS COVERED WITH A GOLD LAYER

被引：9

作者：

VERESEGYHAZY, R

MOJZES, I

PECZ, B

机构：

来源：

VACUUM | 1986年 / 36卷 / 7-9期

关键词：

D O I：

10.1016/0042-207X(86)90245-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：547 / 549

页数：3

共 10 条

[1] EVOLVED GAS-ANALYSIS SYSTEM [J].

GALLAGHER, PK .

THERMOCHIMICA ACTA, 1978, 26 (1-3) :175-183

[2] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS [J].

KINSBRON, E ;

GALLAGHER, PK ;

ENGLISH, AT .

SOLID-STATE ELECTRONICS, 1979, 22 (05) :517-&

[3] PHYSIOCHEMICAL EFFECTS OF HEATING GOLD THIN-FILMS ON GALLIUM-ARSENIDE [J].

LEUNG, S ;

WONG, LK ;

CHUNG, DDL ;

MILNES, AG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (02) :462-468

[4] VOLATILE COMPONENT LOSS AND CONTACT RESISTANCE OF METALS ON GAAS AND GAP DURING ANNEALING [J].

MOJZES, I ;

SEVESTYEN, T ;

SZIGETHY, D .

SOLID-STATE ELECTRONICS, 1982, 25 (06) :449-&

[5] INSITU MASS-SPECTROMETRIC INVESTIGATION OF METALLIZED INP SAMPLES DURING ANNEALING [J].

MOJZES, I ;

SZIGETHY, D ;

VERESEGYHAZY, R .

ELECTRONICS LETTERS, 1983, 19 (03) :117-118

[6]

MOJZES I, UNPUB THIN SOLID FIL

[7] ON THE FORMATION OF BINARY COMPOUNDS IN AU-INP SYSTEM [J].

PIOTROWSKA, A ;

AUVRAY, P ;

GUIVARCH, A ;

PELOUS, G ;

HENOC, P .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5112-5117

[8] INSITU MEASUREMENTS OF ARSENIC LOSSES DURING ANNEALING OF USUAL EVAPORATED CONTACTS OF GAAS GUNN DIODES [J].

SEBESTYEN, T ;

MENYHARD, M ;

SZIGETHY, D .

ELECTRONICS LETTERS, 1976, 12 (04) :96-97

[9] INSITU INVESTIGATIONS OF THE METAL-COMPOUND SEMICONDUCTOR INTERACTION BY MASS-SPECTROMETRY AND ELECTRICAL-RESISTANCE MEASUREMENTS [J].

SZIGETHY, D ;

MOJZES, I ;

SEBESTYEN, T .

INTERNATIONAL JOURNAL OF MASS SPECTROMETRY AND ION PROCESSES, 1983, 52 (01) :117-129

[10] THE INFLUENCE OF A GOLD LAYER ON THE THERMAL-DECOMPOSITION OF INAS [J].

VERESEGYHAZY, R ;

PECZ, B ;

MOJZES, I .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 94 (01) :K11-K12

← 1 →