INSITU MASS-SPECTROMETRIC INVESTIGATION OF METALLIZED INP SAMPLES DURING ANNEALING

被引：12

作者：

MOJZES, I

SZIGETHY, D

VERESEGYHAZY, R

机构：

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 03期

关键词：

D O I：

10.1049/el:19830083

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：117 / 118

页数：2

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共 10 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[2] HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS
GUHA, S
ARORA, BM
SALVI, VP
[J]. SOLID-STATE ELECTRONICS, 1977, 20 (05) : 431 - &
[3] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS
GYULAI, J
MAYER, JW
RODRIGUEZ, V
YU, AYC
GOPEN, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +
[4] HIRAKI A, 1982, JAPAN ANN REV ELECTR, P36
[5] DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS
KINSBRON, E
GALLAGHER, PK
ENGLISH, AT
[J]. SOLID-STATE ELECTRONICS, 1979, 22 (05) : 517 - &
[6] VOLATILE COMPONENT LOSS AND CONTACT RESISTANCE OF METALS ON GAAS AND GAP DURING ANNEALING
MOJZES, I
SEVESTYEN, T
SZIGETHY, D
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (06) : 449 - &
[7] ON THE FORMATION OF BINARY COMPOUNDS IN AU-INP SYSTEM
PIOTROWSKA, A
AUVRAY, P
GUIVARCH, A
PELOUS, G
HENOC, P
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 5112 - 5117
[8] USE OF GA IN METAL-GAAS CONTACTS TO ELIMINATE LARGE AS LOSS PEAKS
SEBESTYEN, T
MOJZES, I
SZIGETHY, D
[J]. ELECTRONICS LETTERS, 1980, 16 (13) : 504 - 505
[9] THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS
SEBESTYEN, T
HARTNAGEL, HL
HERRON, LH
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (12) : 1073 - 1077
[10] INSITU MEASUREMENTS OF ARSENIC LOSSES DURING ANNEALING OF USUAL EVAPORATED CONTACTS OF GAAS GUNN DIODES
SEBESTYEN, T
MENYHARD, M
SZIGETHY, D
[J]. ELECTRONICS LETTERS, 1976, 12 (04) : 96 - 97