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USE OF GA IN METAL-GAAS CONTACTS TO ELIMINATE LARGE AS LOSS PEAKS
被引:16
作者
:
SEBESTYEN, T
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY
SEBESTYEN, T
[
1
]
MOJZES, I
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY
MOJZES, I
[
1
]
SZIGETHY, D
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY
SZIGETHY, D
[
1
]
机构
:
[1]
HUNGARIAN ACAD SCI,TECH PHYS RES INST,H-1325 BUDAPEST,HUNGARY
来源
:
ELECTRONICS LETTERS
|
1980年
/ 16卷
/ 13期
关键词
:
D O I
:
10.1049/el:19800352
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:504 / 505
页数:2
相关论文
共 7 条
[1]
SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ARTHUR, JR
[J].
SURFACE SCIENCE,
1974,
43
(02)
: 449
-
461
[2]
HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS
GUHA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
GUHA, S
ARORA, BM
论文数:
0
引用数:
0
h-index:
0
机构:
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
ARORA, BM
SALVI, VP
论文数:
0
引用数:
0
h-index:
0
机构:
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
SALVI, VP
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(05)
: 431
-
&
[3]
DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS
KINSBRON, E
论文数:
0
引用数:
0
h-index:
0
KINSBRON, E
GALLAGHER, PK
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, PK
ENGLISH, AT
论文数:
0
引用数:
0
h-index:
0
ENGLISH, AT
[J].
SOLID-STATE ELECTRONICS,
1979,
22
(05)
: 517
-
&
[4]
GALLIUM PLUS METAL CONTACTS TO GALLIUM-ARSENIDE ALLOYED IN AN ARSENIC MOLECULAR-BEAM
MOJZES, I
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
MOJZES, I
SEBESTYEN, T
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
SEBESTYEN, T
BARNA, PB
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
BARNA, PB
GERGELY, G
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
GERGELY, G
SZIGETHY, D
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
SZIGETHY, D
[J].
THIN SOLID FILMS,
1979,
61
(01)
: 27
-
32
[5]
THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS
SEBESTYEN, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND
SEBESTYEN, T
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND
HARTNAGEL, HL
HERRON, LH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND
HERRON, LH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(12)
: 1073
-
1077
[6]
INSITU MEASUREMENTS OF ARSENIC LOSSES DURING ANNEALING OF USUAL EVAPORATED CONTACTS OF GAAS GUNN DIODES
SEBESTYEN, T
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
SEBESTYEN, T
MENYHARD, M
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
MENYHARD, M
SZIGETHY, D
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
SZIGETHY, D
[J].
ELECTRONICS LETTERS,
1976,
12
(04)
: 96
-
97
[7]
SZIGETHY D, 1977, 7TH P INT VAC C 3RD, P1959
←
1
→
共 7 条
[1]
SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
ARTHUR, JR
[J].
SURFACE SCIENCE,
1974,
43
(02)
: 449
-
461
[2]
HIGH-TEMPERATURE ANNEALING BEHAVIOR OF SCHOTTKY BARRIERS ON GAAS WITH GOLD AND GOLD-GALLIUM CONTACTS
GUHA, S
论文数:
0
引用数:
0
h-index:
0
机构:
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
GUHA, S
ARORA, BM
论文数:
0
引用数:
0
h-index:
0
机构:
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
ARORA, BM
SALVI, VP
论文数:
0
引用数:
0
h-index:
0
机构:
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
SALVI, VP
[J].
SOLID-STATE ELECTRONICS,
1977,
20
(05)
: 431
-
&
[3]
DISSOCIATION OF GAAS AND GA0.7AL0.3AS DURING ALLOYING OF GOLD CONTACT FILMS
KINSBRON, E
论文数:
0
引用数:
0
h-index:
0
KINSBRON, E
GALLAGHER, PK
论文数:
0
引用数:
0
h-index:
0
GALLAGHER, PK
ENGLISH, AT
论文数:
0
引用数:
0
h-index:
0
ENGLISH, AT
[J].
SOLID-STATE ELECTRONICS,
1979,
22
(05)
: 517
-
&
[4]
GALLIUM PLUS METAL CONTACTS TO GALLIUM-ARSENIDE ALLOYED IN AN ARSENIC MOLECULAR-BEAM
MOJZES, I
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
MOJZES, I
SEBESTYEN, T
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
SEBESTYEN, T
BARNA, PB
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
BARNA, PB
GERGELY, G
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
GERGELY, G
SZIGETHY, D
论文数:
0
引用数:
0
h-index:
0
机构:
Research Institute for Technical Physics, the Hungarian Academy of Sciences, H-1325 Budapest
SZIGETHY, D
[J].
THIN SOLID FILMS,
1979,
61
(01)
: 27
-
32
[5]
THIN-PHASE EPITAXY FOR GOOD SEMICONDUCTOR METAL OHMIC CONTACTS
SEBESTYEN, T
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND
SEBESTYEN, T
HARTNAGEL, HL
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND
HARTNAGEL, HL
HERRON, LH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEWCASTLE TYNE,MERZ,COURT,NEWCASTLE TYNE NE1 7RU,ENGLAND
HERRON, LH
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1975,
22
(12)
: 1073
-
1077
[6]
INSITU MEASUREMENTS OF ARSENIC LOSSES DURING ANNEALING OF USUAL EVAPORATED CONTACTS OF GAAS GUNN DIODES
SEBESTYEN, T
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
SEBESTYEN, T
MENYHARD, M
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
MENYHARD, M
SZIGETHY, D
论文数:
0
引用数:
0
h-index:
0
机构:
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
HUNGARIAN ACAD SCI,RES INST TECH PHYS,UJPEST 1,POB 76,1325 BUDAPEST,HUNGARY
SZIGETHY, D
[J].
ELECTRONICS LETTERS,
1976,
12
(04)
: 96
-
97
[7]
SZIGETHY D, 1977, 7TH P INT VAC C 3RD, P1959
←
1
→