INFLUENCE OF GEOMETRY ON INTERPRETATION OF CURRENT IN EPITAXIAL DIODES

被引：45

作者：

GRIMBERGEN, CA ^{[1
]}

机构：

[1] GRONINGEN STATE UNIV,TECH PHYS LAB,GRONINGEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 12期

关键词：

D O I：

10.1016/0038-1101(76)90185-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1033 / 1037

页数：5

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