PHOTO-ELECTRON PARAMAGNETIC-RESONANCE STUDY OF ASGA ANTISITE DEFECT IN AS-GROWN GAAS CRYSTALS OF DIFFERENT STOICHIOMETRY

被引：21

作者：

TSUKADA, N

KIKUTA, T

ISHIDA, K

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.L689

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L689 / L692

页数：4

共 22 条

[1] PHOTORESPONSE OF THE ASGA ANTISITE DEFECT IN AS-GROWN GAAS [J].

BAEUMLER, M ;

KAUFMANN, U ;

WINDSCHEIF, J .

APPLIED PHYSICS LETTERS, 1985, 46 (08) :781-783

[2] DEEP-LEVEL OPTICAL SPECTROSCOPY IN GAAS [J].

CHANTRE, A ;

VINCENT, G ;

DUBOIS .

PHYSICAL REVIEW B, 1981, 23 (10) :5335-5359

[3] IDENTIFICATION OF ASGA ANTISITE DEFECTS IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

ELLIOTT, K ;

CHEN, RT ;

GREENBAUM, SG ;

WAGNER, RJ .

APPLIED PHYSICS LETTERS, 1984, 44 (09) :907-909

[4] A SPECIFIC TRAP LEVEL AT 78 MEV IN UNDOPED LIQUID ENCAPSULATED CZOCHRALSKI GROWN GAAS-SI MATERIALS [J].

FILLARD, JP ;

CASTAGNE, M ;

BONNAFE, J ;

DEMURCIA, M .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6767-6770

[5]

FUKUDA T, 1983, I PHYS C SER, V65, P23

[6]

GOLZENE A, 1985, J ELECTRON MATER A, V14, P932

[7]

GOSPWAMI NK, 1981, SOLID STATE COMMUN, V40, P473

[8] USE OF SUPERCONDUCTING CAVITIES TO RESOLVE CARRIER TRAPPING EFFECTS IN CDS [J].

HARTWIG, WH ;

HINDS, JJ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) :2020-&

[9] STOICHIOMETRY-CONTROLLED COMPENSATION IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

HOLMES, DE ;

CHEN, RT ;

ELLIOTT, KR ;

KIRKPATRICK, CG .

APPLIED PHYSICS LETTERS, 1982, 40 (01) :46-48

[10] DISTINCTION BETWEEN MIDGAP LEVELS IN LEC N-GAAS DETERMINED BY DLTS AND OPTICAL-ABSORPTION AT 1.1-MU-M [J].

ISHIDA, K ;

YAHATA, A ;

KIKUTA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04) :L250-L252

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