DISTINCTION BETWEEN MIDGAP LEVELS IN LEC N-GAAS DETERMINED BY DLTS AND OPTICAL-ABSORPTION AT 1.1-MU-M

被引：14

作者：

ISHIDA, K

YAHATA, A

KIKUTA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 04期

关键词：

D O I：

10.1143/JJAP.24.L250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L250 / L252

页数：3

共 8 条

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[5] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY [J].

TAJIMA, M .

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[6] VARIATION OF THE MIDGAP ELECTRON TRAPS (EL2) IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

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IKOMA, T .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6448-6451

[7]

TANIGUCHI M, 1982, SEMIINSULATING 3 5 M, P283

[8] DEEP PHOTO-LUMINESCENCE BAND RELATED TO OXYGEN IN GALLIUM-ARSENIDE [J].

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