RADIATION-DAMAGE IN INDIUM TIN OXIDE (ITO) LAYERS

被引：32

作者：

MORGAN, DV ^{[1
]}

SALEHI, A ^{[1
]}

ALIYU, YH ^{[1
]}

BUNCE, RW ^{[1
]}

DISKETT, D ^{[1
]}

机构：

[1] ROYAL MIL COLL SCI,CRANFIELD UNIV,APPL PHYS & ELECTROOPT GRP,SWINDON SN6 8LA,WILTS,ENGLAND

来源：

THIN SOLID FILMS | 1995年 / 258卷 / 1-2期

关键词：

INDIUM; RADIATION DAMAGE; SEMICONDUCTORS; TIN OXIDE;

D O I：

10.1016/0040-6090(94)06420-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effects of proton damage on transparent conducting indium tin oxide (ITO) layers were investigated by electrical and optical techniques. ITO layers were found to be highly resistant to proton damage for fluences up to 10(16) ions cm(-2). For fluences greater than 10(16) cm(-2) the resistivity rises rapidly with a corresponding degradation of the transmittance.

引用

页码：283 / 285

页数：3

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