AMORPHOUS THIN-FILM DIFFUSION-BARRIERS ON GAAS AND INP

被引:15
作者
ANDERSON, WT
CHRISTOU, A
DAVEY, JE
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关键词
D O I
10.1016/0040-6090(83)90548-5
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:57 / 67
页数:11
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共 17 条
[11]   EFFECT OF METALLOIDAL ELEMENTS ON CORROSION-RESISTANCE OF AMORPHOUS IRON - CHROMIUM-ALLOYS [J].
NAKA, M ;
HASHIMOTO, K ;
MASUMOTO, T .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1978, 28 (03) :403-413
[12]  
PAPANICOLAOU NA, 1982, UNPUB I PHYS C SER
[13]  
PORTNOY W, COMMUNICATION
[14]   DIFFUSION AND STRUCTURAL RELAXATION IN COMPOSITIONALLY MODULATED AMORPHOUS METAL-FILMS [J].
ROSENBLUM, MP ;
SPAEPEN, F ;
TURNBULL, D .
APPLIED PHYSICS LETTERS, 1980, 37 (02) :184-186
[15]   STUDIES OF ALUMINUM SCHOTTKY-BARRIER GATE ANNEALING ON GAAS FET STRUCTURES [J].
SLEGER, K ;
CHRISTOU, A .
SOLID-STATE ELECTRONICS, 1978, 21 (04) :677-684
[16]  
WHITE PM, 1978, EUR MICROWAVE C PARI
[17]  
WILEY D, 1980, SAND807167 SAND LAB