A COMPARISON OF TUNGSTEN FILM DEPOSITION TECHNIQUES FOR VERY LARGE-SCALE INTEGRATION TECHNOLOGY

被引：33

作者：

AHN, KY

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(87)90206-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：469 / 478

页数：10

共 22 条

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TING, CY
KIM, J
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[2] AHN KY, 1986, 1985 P WORKSH TUNGST, P239
[3] BEINGLASS I, 1986, 1985 P WORKSH TUNGST, P13
[4] BLEWER RS, 1986, 1985 P WORKSH TUNGST, P407
[5] DAVARI B, 1987, 1987 S VLSI TECHN, P59
[6] FOSTER RF, 1986, 1986 P WORKSH TUNGST, P147
[7] CHEMICAL VAPOR-DEPOSITION OF METALS FOR INTEGRATED-CIRCUIT APPLICATIONS
GREEN, ML
LEVY, RA
[J]. JOURNAL OF METALS, 1985, 37 (06): : 63 - 71
[8] HEY HPW, 1986, 1986 INT EL DEV M NE, P50
[9] A NEW TUNGSTEN GATE PROCESS FOR VLSI APPLICATIONS
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YAMAMOTO, N
KOBAYASHI, N
TERADA, T
MIZUTANI, T
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) : 1174 - 1179
[10] KATTELUS HP, 1985, J VAC SCI TECHNOL A, V3