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DISAPPEARANCE OF LONG-RANGE ORDERING IN GA0.5IN0.5P WITH TILTING OF SUBSTRATE FROM (100) TOWARDS (511)A

被引：11
作者：
MINAGAWA, S
KONDOW, M
KAKIBAYASHI, H
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 21期
关键词：
D O I：
10.1049/el:19890961
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1439 / 1440
页数：2
相关论文
共 6 条
[1]  
Inoue Y., 1988, Optoelectronics - Devices and Technologies, V3, P61
[2]   INFLUENCE OF GROWTH TEMPERATURE ON CRYSTALLINE-STRUCTURE IN GA0.5IN0.5P GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
KONDOW, M ;
KAKIBAYASHI, H ;
MINAGAWA, S ;
INOUE, Y ;
NISHINO, T ;
HAMAKAWA, Y .
APPLIED PHYSICS LETTERS, 1988, 53 (21) :2053-2055
[3]  
KONDOW M, 1989, 16TH INT S GALL ARS
[4]   ZINC-DOPING OF (511)A LAYERS OF (AL0.6GA0.4)0.5IN0.5P GROWN BY ATMOSPHERIC METALORGANIC VAPOR-PHASE EPITAXY [J].
MINAGAWA, S ;
KONDOW, M .
ELECTRONICS LETTERS, 1989, 25 (06) :413-414
[5]   DEPENDENCE OF PHOTOLUMINESCENCE PEAK ENERGY OF MOVPE-GROWN ALGAINP ON SUBSTRATE ORIENTATION [J].
MINAGAWA, S ;
KONDOW, M .
ELECTRONICS LETTERS, 1989, 25 (12) :758-759
[6]   ELECTROREFLECTANCE STUDY OF ORDERED GA0.5IN0.5P ALLOYS GROWN ON GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].
NISHINO, T ;
INOUE, Y ;
HAMAKAWA, Y ;
KONDOW, M ;
MINAGAWA, S .
APPLIED PHYSICS LETTERS, 1988, 53 (07) :583-585
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