ELECTROREFLECTANCE STUDY OF ORDERED GA0.5IN0.5P ALLOYS GROWN ON GAAS BY ORGANOMETALLIC VAPOR-PHASE EPITAXY

被引：57

作者：

NISHINO, T

INOUE, Y

HAMAKAWA, Y

KONDOW, M

MINAGAWA, S

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.99864

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：583 / 585

页数：3

共 11 条

[1] BAND-STRUCTURE OF GAXIN1-XP ALLOYS
ALIBERT, C
BORDURE, G
LAUGIER, A
[J]. SURFACE SCIENCE, 1973, 37 (01) : 623 - 630
[2] BAND-STRUCTURE ENHANCEMENT OF INDIRECT TRANSITIONS
AUVERGNE, D
MERLE, P
MATHIEU, H
[J]. SOLID STATE COMMUNICATIONS, 1977, 21 (05) : 437 - 439
[3] ORDERING-INDUCED CHANGES IN THE OPTICAL-SPECTRA OF SEMICONDUCTOR ALLOYS
BERNARD, JE
WEI, SH
WOOD, DM
ZUNGER, A
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (04) : 311 - 313
[4] STUDIES OF GAXIN1-XP LAYERS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY - EFFECTS OF V/III RATIO AND GROWTH TEMPERATURE
GOMYO, A
KOBAYASHI, K
KAWATA, S
HINO, I
SUZUKI, T
YUASA, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 367 - 373
[5] EVIDENCE FOR THE EXISTENCE OF AN ORDERED STATE IN GA0.5IN0.5P GROWN BY METALORGANIC VAPOR-PHASE EPITAXY AND ITS RELATION TO BAND-GAP ENERGY
GOMYO, A
SUZUKI, T
KOBAYASHI, K
KAWATA, S
HINO, I
YUASA, T
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (11) : 673 - 675
[6] ORDERED STRUCTURE IN OMVPE-GROWN GA0.5IN0.5P
KONDOW, M
KAKIBAYASHI, H
MINAGAWA, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 291 - 296
[7] KONDOW M, UNPUB
[8] STRUCTURAL STABILITY AND SELECTIVITY OF THIN EPITAXIAL SEMICONDUCTORS
MBAYE, AA
ZUNGER, A
WOOD, DM
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (13) : 782 - 784
[9] GROWTH OF HIGH-QUALITY INGAALP EPILAYERS BY MOCVD USING METHYL METALORGANICS AND THEIR APPLICATION TO VISIBLE SEMICONDUCTOR-LASERS
OHBA, Y
ISHIKAWA, M
SUGAWARA, H
YAMAMOTO, M
NAKANISI, T
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 374 - 379
[10] ATOMIC-STRUCTURE AND ORDERING IN SEMICONDUCTOR ALLOYS
SRIVASTAVA, GP
MARTINS, JL
ZUNGER, A
[J]. PHYSICAL REVIEW B, 1985, 31 (04): : 2561 - 2564

← 1 2 →