STUDY OF THE LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED TUNGSTEN-SILICON INTERFACE - INTERFACIAL FLUORINE

被引：11

作者：

CARLISLE, JA

CHOPRA, DR

DILLINGHAM, TR

GNADE, B

SMITH, G

机构：

[1] E TEXAS STATE UNIV,SURFACE SCI LAB,COMMERCE,TX 75428

[2] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 06期

关键词：

D O I：

10.1063/1.342820

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2313 / 2320

页数：8

共 25 条

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ONEILL, DG ;

CHABAL, Y ;

ROWE, JE ;

POATE, JM ;

BISI, O ;

CALANDRA, C .

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[10]

Gargini P. A., 1981, International Electron Devices Meeting, P54

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