INVESTIGATION OF THE GAP STATE DISTRIBUTION IN A-SI-H USING POST-TRANSIT PULSE ANALYSIS

被引：4

作者：

BARCLAY, RP ^{[1
]}

NESLADEK, M ^{[1
]}

DYER, T ^{[1
]}

KURNIA, D ^{[1
]}

机构：

[1] CZECHOSLOVAK ACAD SCI, INST PHYS, CS-18040 PRAGUE, CZECHOSLOVAKIA

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1989年 / 114卷 / Pt1期

关键词：

Semiconductor Materials - Hydrogenation - Silicon and Alloys - Amorphous;

D O I：

10.1016/0022-3093(89)90130-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The gap state distribution in a-Si:H has been investigated using the recently developed Post-Transit Photocurrent Analysis (PTPA). The authors' analysis, restricted to data obtained from samples with blocking contacts or samples in the p-i-n configuration, provides convincing evidence that PTPA genuinely probes the gap state distribution. Upon light-soaking, a direct relationship was found between the gap state density and the mobility-lifetime product. A maximum in the density of states at approximately 0.6 eV shifts towards mid-gap upon light-soaking. The temperature dependence of the peak yields information about the value of the attempt-to-escape frequency.

引用

页码：259 / 261

页数：3

共 5 条

[1]

BARCLAY RP, 1988, MATER RES SOC S P, V118, P519

[2]

SCHUMM G, 1988, MRS S P PITTSBURGH, V118

[3] POST-TRANSIT TIME-OF-FLIGHT CURRENTS AS A PROBE OF THE DENSITY OF STATES IN HYDROGENATED AMORPHOUS-SILICON [J].

SEYNHAEVE, GF ;

BARCLAY, RP ;

ADRIAENSSENS, GJ ;

MARSHALL, JM .

PHYSICAL REVIEW B, 1989, 39 (14) :10196-10205

[4]

SEYNHAEVE GJ, 1989, THESIS KATHOLIEKE U

[5] DISORDER EFFECTS ON DEEP TRAPPING IN AMORPHOUS-SEMICONDUCTORS [J].

STREET, RA .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1984, 49 (01) :L15-L20

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