METAL-NONMETAL TRANSITIONS IN DOPED SILICON

被引:8
作者
PARK, KT
UHM, SR
KIM, CK
机构
来源
PHYSICAL REVIEW B | 1984年 / 29卷 / 10期
关键词
D O I
10.1103/PhysRevB.29.5937
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5937 / 5940
页数:4
相关论文
共 22 条
[1]   METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J].
BERGGREN, KF .
PHILOSOPHICAL MAGAZINE, 1973, 27 (05) :1027-1040
[2]   STRESS DEPENDENCE OF THE METAL-INSULATOR-TRANSITION IN DOPED SEMICONDUCTORS [J].
BHATT, RN .
PHYSICAL REVIEW B, 1982, 26 (02) :1082-1085
[3]   EFFECT OF WAVEFUNCTION ANISOTROPY ON THE METAL-INSULATOR-TRANSITION DENSITY IN MANY-VALLEY SEMICONDUCTORS [J].
BHATT, RN .
PHYSICAL REVIEW B, 1981, 24 (06) :3630-3633
[4]   SINGLE-PARTICLE ENERGY-LEVELS IN DOPED SEMICONDUCTORS AT DENSITIES BELOW THE METAL-NONMETAL TRANSITION [J].
BHATT, RN ;
RICE, TM .
PHYSICAL REVIEW B, 1981, 23 (04) :1920-1935
[5]  
CAPPIZZI M, 1980, PHYS REV LETT, V44, P1019
[6]   PARAMAGNETIC AND ANTIFERROMAGNETIC PHASES IN HALF-FILLED NARROW ENERGY BAND [J].
CARON, LG ;
KEMENY, G .
PHYSICAL REVIEW B, 1971, 3 (09) :3007-&
[7]   DONOR-POLARIZABILITY ENHANCEMENT AS THE INSULATOR-METAL TRANSITION IS APPROACHED FROM THE INSULATING SIDE [J].
CASTNER, TG .
PHYSICAL REVIEW B, 1980, 21 (08) :3523-3538
[8]  
CASTNER TG, 1979, SOLID STATE COMMUN, V32, P121, DOI 10.1016/0038-1098(79)91071-8
[9]   UNIVERSALITY ASPECTS OF METAL-NONMETAL TRANSITION IN CONDENSED MEDIA [J].
EDWARDS, PP ;
SIENKO, MJ .
PHYSICAL REVIEW B, 1978, 17 (06) :2575-2581
[10]  
FRIEDMAN LR, 1978, 19TH P SCOTT U SUMM