INITIAL FORMATION PROCESS OF METAL SILICON INTERFACES

[1] Anderson P. W., 1974, NATO ADV STUDY I SER, P1

[2] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[3] FREE ENERGY OF A NONUNIFORM SYSTEM .1. INTERFACIAL FREE ENERGY [J]. JOURNAL OF CHEMICAL PHYSICS, 1958, 28 (02) : 258 - 267

[4] PREPARATION OF LARGE-AREA MONO-CRYSTALLINE SILICON THIN WINDOWS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (09) : 1212 - 1216

[5] Chu W. K., 1978, BACKSCATTERING SPECT

[6] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2043 - 2046

[7] Feldman L. C., 1980, SURFACE SCI RECENT P

[8] MEV ION-SCATTERING FOR SURFACE-STRUCTURE DETERMINATION [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1981, 10 (02): : 143 - 167

[9] SI(001) SURFACE STUDIES USING HIGH-ENERGY ION-SCATTERING [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 589 - 593

[10] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (20) : 1396 - 1399

[1] Anderson P. W., 1974, NATO ADV STUDY I SER, P1

[2] STRUCTURE AND ELECTRICAL CHARACTERISTICS OF EPITAXIAL PALLADIUM SILICIDE CONTACTS ON SINGLE-CRYSTAL SILICON AND DIFFUSED P-N DIODES [J]. SOLID-STATE ELECTRONICS, 1972, 15 (12) : 1331 - &

[3] FREE ENERGY OF A NONUNIFORM SYSTEM .1. INTERFACIAL FREE ENERGY [J]. JOURNAL OF CHEMICAL PHYSICS, 1958, 28 (02) : 258 - 267

[4] PREPARATION OF LARGE-AREA MONO-CRYSTALLINE SILICON THIN WINDOWS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1980, 51 (09) : 1212 - 1216

[5] Chu W. K., 1978, BACKSCATTERING SPECT

[6] ATOMIC DISPLACEMENTS IN THE SI(111)-(7X7) SURFACE [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (25) : 2043 - 2046

[7] Feldman L. C., 1980, SURFACE SCI RECENT P

[8] MEV ION-SCATTERING FOR SURFACE-STRUCTURE DETERMINATION [J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1981, 10 (02): : 143 - 167

[9] SI(001) SURFACE STUDIES USING HIGH-ENERGY ION-SCATTERING [J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 168 (1-3): : 589 - 593

[10] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (20) : 1396 - 1399