THE CRYSTALLINE TO AMORPHOUS TRANSFORMATION IN SILICON

[1] BRICE DK, 1975, DEPOSITION DISTRIBUT, V1

[2] DISPLACEMENT CRITERION FOR AMORPHIZATION OF SILICON DURING ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7143 - 7146

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[5] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403

[6] A NEUTRON-DIFFRACTION STUDY OF THE STRUCTURE OF EVAPORATED AMORPHOUS-GERMANIUM [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 48 (2-3) : 265 - 289

[7] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[8] NUMERICAL EVALUATION OF N-BEAM WAVE-FUNCTIONS IN ELECTRON-SCATTERING BY MULTI-SLICE METHOD [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1974, A 30 (MAR): : 280 - 290

[9] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[10] TETRAHEDRALLY COORDINATED RANDOM-NETWORK STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 92 - 95

[1] BRICE DK, 1975, DEPOSITION DISTRIBUT, V1

[2] DISPLACEMENT CRITERION FOR AMORPHIZATION OF SILICON DURING ION-IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7143 - 7146

[3] REGROWTH BEHAVIOR OF ION-IMPLANTED AMORPHOUS LAYERS ON [111] SILICON [J]. APPLIED PHYSICS LETTERS, 1976, 29 (02) : 92 - 93

[4] A NEW TECHNIQUE FOR OBSERVING THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN THIN SURFACE-LAYERS ON SILICON-WAFERS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) : 4106 - 4110

[5] SOME OBSERVATIONS ON THE AMORPHOUS TO CRYSTALLINE TRANSFORMATION IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 397 - 403

[6] A NEUTRON-DIFFRACTION STUDY OF THE STRUCTURE OF EVAPORATED AMORPHOUS-GERMANIUM [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1982, 48 (2-3) : 265 - 289

[7] ION IMPLANTATION IN SEMICONDUCTORS .2. DAMAGE PRODUCTION AND ANNEALING [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1972, 60 (09): : 1062 - &

[8] NUMERICAL EVALUATION OF N-BEAM WAVE-FUNCTIONS IN ELECTRON-SCATTERING BY MULTI-SLICE METHOD [J]. ACTA CRYSTALLOGRAPHICA SECTION A, 1974, A 30 (MAR): : 280 - 290

[9] Morehead F. F. Jr., 1970, Radiation Effects, V6, P27, DOI 10.1080/00337577008235042

[10] TETRAHEDRALLY COORDINATED RANDOM-NETWORK STRUCTURE [J]. PHYSICAL REVIEW LETTERS, 1973, 31 (02) : 92 - 95