THE SURFACE CHARACTERIZATION OF TITANIUM AND TITANIUM-NICKEL ALLOYS IN SULFURIC-ACID

被引:84
作者
ASAMI, K
CHEN, SC
HABAZAKI, H
HASHIMOTO, K
机构
[1] Institute for Materials Research, Tohoku University, Sendai, 980, 2-1-1, Katahira
关键词
D O I
10.1016/0010-938X(93)90131-Y
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Passive films formed on pure Ti and crystalline and amorphous Ti-Ni alloys containing from 30 to 60 at% Ti in a sulfuric acid solution were studied by XPS and photoelectrochemical methods. The photocurrent increased with applied anodic potential. The band-gap energies in the surface films were in the range of 3.2-3.4 eV which decreased with increasing applied potential. In the surface film, Ti ions were enriched. The Ti in the film consisted of Ti4+, Ti3+ and Ti2- ions. The ratios between them on a specimen were independent of the applied potential, although the thickness of the surface film itself increased with the increasing potential. The surface films on pure Ti and Ti-Ni alloys contained OH-type oxygen.
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页码:43 / 49
页数:7
相关论文
共 29 条
[11]   A PHOTOCURRENT SPECTROSCOPIC INVESTIGATION OF PASSIVE FILMS ON CHROMIUM [J].
DIQUARTO, F ;
PIAZZA, S ;
SUNSERI, C .
CORROSION SCIENCE, 1990, 31 :721-726
[12]   SEMICONDUCTING PROPERTIES OF ANODIC WO3 AMORPHOUS FILMS [J].
DIQUARTO, F ;
DIPAOLA, A ;
SUNSERI, C .
ELECTROCHIMICA ACTA, 1981, 26 (08) :1177-1184
[13]   DEPLETION-LAYER PHOTOEFFECTS IN SEMICONDUCTORS [J].
GARTNER, WW .
PHYSICAL REVIEW, 1959, 116 (01) :84-87
[14]   CALCIUM-PHOSPHATE NATURALLY FORMED ON TITANIUM IN ELECTROLYTE SOLUTION [J].
HANAWA, T ;
OTA, M .
BIOMATERIALS, 1991, 12 (08) :767-774
[15]   ANALYSIS OF SEMICONDUCTOR PROPERTIES OF PASSIVE FILMS ON FE-CR ALLOYS BY PHOTOELECTRIC POLARIZATION METHOD [J].
HARA, N ;
YAMADA, A ;
SUGIMOTO, K .
JOURNAL OF THE JAPAN INSTITUTE OF METALS, 1985, 49 (08) :640-649
[16]  
HASHIMOTO K, 1977, BOSHOKU GIJUTSU, V26, P445
[17]  
Johnson E. J., 1967, SEMICONDUCTORS SEMIM, V3, P153
[18]   X-RAY PHOTOELECTRON STUDIES ON SOME OXIDES AND HYDROXIDES OF COBALT, NICKEL, AND COPPER [J].
MCINTYRE, NS ;
COOK, MG .
ANALYTICAL CHEMISTRY, 1975, 47 (13) :2208-2213
[19]  
Mott N. F., 1979, ELECTRONIC PROCESSES
[20]   PHOTOELECTROCHEMICAL PROPERTIES OF ION-IMPLANTED HAFNIUM DIOXIDE FILMS [J].
NEWMARK, AR ;
STIMMING, U .
ELECTROCHIMICA ACTA, 1989, 34 (01) :47-55