ELECTRON-CYCLOTRON RESONANCE MICROWAVE ION SOURCES FOR THIN-FILM PROCESSING

被引:7
作者
BERRY, LA
GORBATKIN, SM
机构
[1] Oak Ridge National Laboratory, Oak Ridge
关键词
D O I
10.1016/0168-583X(91)95114-S
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Plasmas created by microwave absorption at the electron cyclotron resonance (ECR) are increasingly used for a variety of plasma processes, including both etching and deposition. ECR sources efficiently couple energy to electrons and use magnetic confinement to maximize the probability of an electron creating an ion or free radical in pressure regimes where the mean free path for ionization is comparable to the ECR source dimensions. The general operating principles of ECR sources are discussed with special emphasis on their use for thin film etching. Data on source performance during Cl based etching of Si using an ECR system are presented.
引用
收藏
页码:1133 / 1137
页数:5
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