共 33 条
[2]
OPTICAL-EMISSION SPECTRUM OF CL2 ECR PLASMA IN THE GAAS REACTIVE ION-BEAM ETCHING (RIBE) SYSTEM
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1984, 23 (03)
:L156-L158
[3]
ELECTRON-CYCLOTRON RESONANCE MICROWAVE DISCHARGES FOR ETCHING AND THIN-FILM DEPOSITION
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1989, 7 (03)
:883-893
[4]
DISTRIBUTED ELECTRON-CYCLOTRON RESONANCE IN SILICON PROCESSING - EPITAXY AND ETCHING
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:2931-2938
[5]
BURKE RR, 1988, MICROWAVE MULTIPOLAR, V31, P67
[6]
FORMATION OF POLYCRYSTALLINE SIC IN ECR PLASMA
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS,
1986, 25 (07)
:L564-L566
[7]
CHEN FF, 1984, INTRO PLASMA PHYSICS, V1
[8]
PLASMA-ETCHING OF III-V SEMICONDUCTORS IN CH4/H2/AR ELECTRON-CYCLOTRON RESONANCE DISCHARGES
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1990, 8 (04)
:596-606
[9]
Flamm D.L., 1981, PLASMA CHEM PLASMA P, V1, P317, DOI [10.1007/bf00565992, DOI 10.1007/BF00565992]
[10]
BEHAVIOR OF AR PLASMAS FORMED IN A MIRROR FIELD ELECTRON-CYCLOTRON RESONANCE MICROWAVE ION-SOURCE
[J].
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1990, 8 (03)
:2893-2899