LEED AES STUDIES OF THE GE ON SI(111)7X7 SURFACE

被引：42

作者：

SHOJI, K

HYODO, M

UEBA, H

TATSUYAMA, C

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 03期

关键词：

D O I：

10.1143/JJAP.22.L200

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L200 / L202

页数：3

共 12 条

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[9] INITIAL-STAGE OF ROOM-TEMPERATURE METAL-SILICIDE FORMATION STUDIED BY HIGH-ENERGY HE+-ION SCATTERING [J].

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