THEORETICAL AND EXPERIMENTAL-STUDY OF SWEPT LINE ELECTRON-BEAM ANNEALING OF SEMICONDUCTORS

被引：4

作者：

BANERJEE, S

STREETMAN, BG

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV TEXAS,DEPT ELECT ENGN,AUSTIN,TX 78712

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332497

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2947 / 2955

页数：9

共 13 条

[1]

BERGER HS, 1964, NAT ACAD SCI NAT RES, V1133, P205

[2] ELECTRON SCATTERING IN THICK TARGETS [J].

BISHOP, HE .

BRITISH JOURNAL OF APPLIED PHYSICS, 1967, 18 (06) :703-&

[3]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI

[4] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS [J].

EVERHART, TE ;

HOFF, PH .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) :5837-&

[5] MICROSECOND TIME-SCALE SI REGROWTH USING A LINE-SOURCE ELECTRON-BEAM [J].

KNAPP, JA ;

PICRAUX, ST .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :873-875

[6] VERSATILE DOUBLE AC HALL-EFFECT SYSTEM FOR PROFILING IMPURITIES IN SEMICONDUCTORS [J].

MCLEVIGE, WV ;

CHATTERJEE, PK ;

STREETMAN, BG .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1977, 10 (04) :335-337

[7] MONTE CARLO CALCULATIONS ON ELECTRON SCATTERING IN A SOLID TARGET [J].

MURATA, K ;

MATSUKAWA, T ;

SHIMIZU, R .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (06) :678-+

[8] MODELING OF BEAM VOLTAGE EFFECTS IN ELECTRON-BEAM ANNEALING [J].

NEUKERMANS, A ;

SAPERSTEIN, W .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06) :1847-1852

[9] THEORY OF MULTIPLE SCATTERING - 2ND BORN APPROXIMATION AND CORRECTIONS TO MOLIERE WORK [J].

NIGAM, BP ;

SUNDARESAN, MK ;

WU, TY .

PHYSICAL REVIEW, 1959, 115 (03) :491-502

[10] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J].

NISSIM, YI ;

LIETOILA, A ;

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :274-279

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