INTERACTION OF RADIATION DEFECTS WITH THE SURFACE OF SILICON

被引：3

作者：

KUZNETSOV, VI

LUGAKOV, PF

TSIKUNOV, AV

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 82卷 / 02期

关键词：

D O I：

10.1002/pssa.2210820216

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：467 / 473

页数：7

共 15 条

[1]

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[2]

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[3] INVESTIGATION OF A HIGH-RESISTIVITY SURFACE-LAYER IN ELECTRON-IRRADIATED SILICON BY SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS [J].

GERASIMENKO, NN ;

DOBROVOLSKII, PP ;

KIBALINA, NP ;

STAS, VF .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 47 (01) :K91-K94

[4]

KAZAKEVICH LA, 1982, PHYS STATUS SOLIDI A, V71, P99, DOI 10.1002/pssa.2210710112

[5]

Konopleva R. F., 1975, INTERACTION HIGH ENE

[6] STUDY OF REARRANGEMENTS OF INTRINSIC DEFECTS AT ANNEALING OF PROTON-IRRADIATED SILICON [J].

KUZNETSOV, VI ;

LUGAKOV, PF .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1982, 112 (02) :457-462

[7]

Lee Y. H., 1974, Radiation Effects, V22, P169, DOI 10.1080/10420157408230775

[8] EPR OF A CARBON-OXYGEN-DIVACANCY COMPLEX IN IRRADIATED SILICON [J].

LEE, YH ;

CORBETT, JW ;

BROWER, KL .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1977, 41 (02) :637-647

[9]

Lugakov P. F., 1979, FIZ TEKH POLUPROV, V13, P401

[10]

NEIMASH VB, 1981, FIZ TEKH POLUPROV, V15, P786

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