INVESTIGATION OF A HIGH-RESISTIVITY SURFACE-LAYER IN ELECTRON-IRRADIATED SILICON BY SCHOTTKY-BARRIER CAPACITANCE MEASUREMENTS

被引：3

作者：

GERASIMENKO, NN

DOBROVOLSKII, PP

KIBALINA, NP

STAS, VF

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1978年 / 47卷 / 01期

关键词：

D O I：

10.1002/pssa.2210470163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K91 / K94

页数：4

共 10 条

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[8] TECHNIQUE FOR DIRECTLY PLOTTING DOPING PROFILE OF SEMICONDUCTOR WAFERS (8-SHAPED WAY) [J].

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[9] CAPACITANCE-VOLTAGE MEASUREMENTS WITH A MERCURY-SILICON DIODE [J].

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POODT, GJ .

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[10]

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