EPR OF A CARBON-OXYGEN-DIVACANCY COMPLEX IN IRRADIATED SILICON

被引：88

作者：

LEE, YH

CORBETT, JW

BROWER, KL

机构：

[1] SUNY ALBANY, INST STUDY DEFECTS SOLIDS, DEPT PHYS, ALBANY, NY 12222 USA

[2] SANDIA LABS, ALBUQUERQUE, NM 87115 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1977年 / 41卷 / 02期

关键词：

D O I：

10.1002/pssa.2210410237

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：637 / 647

页数：11

共 32 条

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[2] ELECTRON IRRADIATION DAMAGE IN SILICON CONTAINING CARBON AND OXYGEN
BEAN, AR
NEWMAN, RC
SMITH, RS
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) : 739 - &
[3] ABSORPTION OF OXYGEN IN SILICON IN NEAR AND FAR INFRARED
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HAYES, W
SPRAY, ARL
WATKINS, GD
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1970, 317 (1528) : 133 - +
[4] EPR EVIDENCE FOR A POSITIVELY CHARGED VACANCY-OXYGEN DEFECT IN SILICON
BROSIOUS, PR
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (04) : 265 - 267
[5] Brower K. L., 1971, Radiation Effects, V8, P213, DOI 10.1080/00337577108231031
[6] O-17 HYPERFINE-STRUCTURE OF NEUTRAL (S=1) VACANCY-OXYGEN CENTER IN ION-IMPLANTED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1972, 5 (11): : 4274 - &
[7] EPR TECHNIQUES FOR STUDYING DEFECTS IN SILICON
BROWER, KL
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1977, 48 (02) : 135 - 141
[8] ELECTRON PARAMAGNETIC RESONANCE OF NEUTRAL (S=1) ONE-VACANCY-OXYGEN CENTER IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1968 - &
[9] EPR OF A JAHN-TELLER DISTORTED (111) CARBON INTERSTITIALLY IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1974, 9 (06): : 2607 - 2617
[10] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON
BROWER, KL
[J]. PHYSICAL REVIEW B, 1976, 14 (03): : 872 - 883

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