OPTICAL-PROPERTIES OF SYMMETRICALLY STRAINED (GAIN)AS/GA(PAS) SUPERLATTICES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY

被引：6

作者：

LUTGEN, S ^{[1
]}

ALBRECHT, TF ^{[1
]}

MARSCHNER, T ^{[1
]}

STOLZ, W ^{[1
]}

GOBEL, EO ^{[1
]}

机构：

[1] PHILIPPS UNIV,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY

来源：

SOLID-STATE ELECTRONICS | 1994年 / 37卷 / 4-6期

关键词：

D O I：

10.1016/0038-1101(94)90323-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Symmetrically strained (GaIn)As/Ga(PAs) superlattice structures (symm. SLS) have been realized by metalorganic vapour phase epitaxy (MOVPE). The high structural as well as optical quality of these symm. SLS has been established by detailed high-resolution X-ray diffraction (XRD) and in particular photoluminescence (PL) and excitation spectroscopy (PLE) investigation. The optical recombination of low temperatures is due to excitons localized in statistical potential fluctuations in the (GaIn)As well layer. The excition binding energy is determined in these symm. SLS to (5.5 +/- 1) meV according to a theoretical description of the PLE spectra usign a two-dimensional (2D) absorption model. Therefore, the excition binding energy is significantly reduced as comparewd to unstrained GaAs quantum wells, caused by a considerably smaller in-plane hole mass for the top most valence subband. An estimate of this mass based on the determined exciton binding energy yields a value of about 0.05 m0.

引用

页码：905 / 909

页数：5

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