HIGH-REFLECTIVE 1.5-MU-M GAINASP/INP BRAGG REFLECTORS GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

被引：5

作者：

STREUBEL, K

WALLIN, J

ZHU, L

LANDGREN, G

QUEISSER, I

机构：

[1] Laboratory of Photonics and Microwave Engineering, Department of Electronics, Royal Institute of Technology, 164 40 Kista

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 28卷 / 1-3期

关键词：

MOCVD; REFLECTIVITY; GAINASP; INDIUM PHOSPHIDE;

D O I：

10.1016/0921-5107(94)90065-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bragg reflectors with very high reflectivities at 1550 nm were grown using metal organic vapor phase epitaxy. Mirrors with 45 and 50 periods exhibit peak reflectivities up to 99.9%. Absolute reflectivity values were determined by modelling the spectral reflectivity around the stopband width. Similar high reflectivities were obtained with Si-doped mirrors. A resistivity of 5.4 x 10(-3) Ohm cm was obtained on 45-period mirrors at a doping level of 1 x 10(19) cm(-1).

引用

页码：285 / 288

页数：4

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