CHEMICAL-REACTION AT THE ANNEALED SI/YB INTERFACE

被引：30

作者：

ROSSI, G

NOGAMI, J

YEH, JJ

LINDAU, I

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期

关键词：

D O I：

10.1116/1.582593

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：530 / 532

页数：3

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