DIFFERENCES IN PHYSICAL-PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON CARBIDE PREPARED BY REACTIVE SPUTTERING

被引：21

作者：

DEMICHELIS, F ^{[1
]}

PIRRI, CF ^{[1
]}

TRESSO, E ^{[1
]}

STAPINSKI, T ^{[1
]}

机构：

[1] STANISLAW STASZIC UNIV MIN & MET, DEPT PHYS & ELECTR TECHNOL, PL-30059 KRAKOW, POLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.350496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The paper deals with structural, optical, and electrical properties of a-SiC:H and a-SiC:H,F films prepared by rf sputtering of a silicon target in Ar + H-2 + CH4 and Ar + H-2 + CF4 gas mixtures, respectively. The comparison of the physical properties of the two different sets of the samples has been considered and the influence of hydrogen and/or fluorine incorporation is examined and discussed.

引用

页码：5641 / 5645

页数：5

共 24 条

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