DIFFERENCES IN PHYSICAL-PROPERTIES OF HYDROGENATED AND FLUORINATED AMORPHOUS-SILICON CARBIDE PREPARED BY REACTIVE SPUTTERING

被引:21
作者
DEMICHELIS, F [1 ]
PIRRI, CF [1 ]
TRESSO, E [1 ]
STAPINSKI, T [1 ]
机构
[1] STANISLAW STASZIC UNIV MIN & MET, DEPT PHYS & ELECTR TECHNOL, PL-30059 KRAKOW, POLAND
关键词
D O I
10.1063/1.350496
中图分类号
O59 [应用物理学];
学科分类号
摘要
The paper deals with structural, optical, and electrical properties of a-SiC:H and a-SiC:H,F films prepared by rf sputtering of a silicon target in Ar + H-2 + CH4 and Ar + H-2 + CF4 gas mixtures, respectively. The comparison of the physical properties of the two different sets of the samples has been considered and the influence of hydrogen and/or fluorine incorporation is examined and discussed.
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收藏
页码:5641 / 5645
页数:5
相关论文
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