THE ELECTRONIC AND OPTICAL-PROPERTIES OF NICKEL DOPED ARSENIC TRISELENIDE

被引:9
作者
BARCLAY, RP [1 ]
MARSHALL, JM [1 ]
MAIN, C [1 ]
机构
[1] DUNDEE COLL TECHNOL,DEPT PHYS,DUNDEE DD1 1HG,SCOTLAND
关键词
D O I
10.1016/0022-3093(85)90889-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
10
引用
收藏
页码:1269 / 1272
页数:4
相关论文
共 10 条
[1]  
BARCLAY R, UNPUB
[2]  
Culter M., 1969, PHYS REV, V181, P1336
[3]   PARAMAGNETIC STATES AND HOPPING CONDUCTIVITY IN A CHALCOGENIDE GLASS AS2TE3 [J].
HAUSER, JJ ;
HUTTON, RS .
PHYSICAL REVIEW LETTERS, 1976, 37 (13) :868-871
[5]   MODIFICATION OF VITREOUS AS2SE3 [J].
KOLOMIETS, BT ;
AVERYANOV, VL ;
LYUBIN, VM ;
PRIKHODKO, OJ .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :1-8
[6]   STATES IN GAP AND RECOMBINATION IN AMORPHOUS-SEMICONDUCTORS [J].
MOTT, NF ;
DAVIS, EA ;
STREET, RA .
PHILOSOPHICAL MAGAZINE, 1975, 32 (05) :961-996
[7]   INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES [J].
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1976, 34 (06) :1101-1108
[8]   ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].
SPEAR, WE ;
LECOMBER, PG .
PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949
[9]   INTERPRETATION OF TRANSPORT RESULTS IN AMORPHOUS-SILICON [J].
SPEAR, WE ;
ALLAN, D ;
LECOMBER, P ;
GHAITH, A .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :357-362
[10]   TOTAL ENERGIES OF STRUCTURAL DEFECTS IN GLASSY SE [J].
VANDERBILT, D ;
JOANNOPOULOS, JD .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :937-944