IMPROVEMENT IN THE QUANTUM EFFICIENCY OF SILICON PHOTODETECTORS AT NEAR IR WAVELENGTHS BY EDGE ILLUMINATION

被引：3

作者：

FAN, CL

BOYD, JT

机构：

来源：

APPLIED OPTICS | 1983年 / 22卷 / 20期

关键词：

D O I：

10.1364/AO.22.003297

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

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页码：3297 / 3299

页数：3

相关论文

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