LUMINESCENCE IN ELECTRON-IRRADIATED CDS

[1] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[2] Aven M., 1967, PHYSICS CHEMISTRY II

[3] AVEN M, 1967, PHYSICS CHEM 2 6 COM, pCH8

[4] BARNES CE, 1973, ION IMPLANTATION SEM, P333

[5] MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN [J]. ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04): : 498 - &

[6] FINE STRUCTURE OF INFRARED ABSORPTION AND EMISSION SPECTRA OF CU2+ IN ZNS AND CDS CRYSTALS [J]. PHYSICAL REVIEW, 1965, 140 (6A): : 2135 - +

[7] ERZEUGUNG ULTRAROTER KUPFERZENTREN IN SNS DURCH KERNZERFALL VON ZN65 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) : 1013 - +

[8] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309

[9] EXPERIMENTAL AND CALCULATED ATOMIC DISPLACEMENT THRESHOLD ENERGIES FOR BINARY SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 310 (1502): : 319 - &

[10] ELECTRON RADIATION DAMAGE AND GREEN EDGE EMISSION OF CDS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1264 - &

[1] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[2] Aven M., 1967, PHYSICS CHEMISTRY II

[3] AVEN M, 1967, PHYSICS CHEM 2 6 COM, pCH8

[4] BARNES CE, 1973, ION IMPLANTATION SEM, P333

[5] MESSUNG DER ENERGIE ZUR VERLAGERUNG EINES GITTERATOMS DURCH ELEKTRONENSTOB IN AIIIBV-VERBINDUNGEN [J]. ZEITSCHRIFT FUR PHYSIK, 1963, 176 (04): : 498 - &

[6] FINE STRUCTURE OF INFRARED ABSORPTION AND EMISSION SPECTRA OF CU2+ IN ZNS AND CDS CRYSTALS [J]. PHYSICAL REVIEW, 1965, 140 (6A): : 2135 - +

[7] ERZEUGUNG ULTRAROTER KUPFERZENTREN IN SNS DURCH KERNZERFALL VON ZN65 [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (06) : 1013 - +

[8] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309

[9] EXPERIMENTAL AND CALCULATED ATOMIC DISPLACEMENT THRESHOLD ENERGIES FOR BINARY SEMICONDUCTORS [J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1969, 310 (1502): : 319 - &

[10] ELECTRON RADIATION DAMAGE AND GREEN EDGE EMISSION OF CDS [J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1970, 3 (06): : 1264 - &