MOVPE GROWTH OF ALGAAS/GAAS HETEROSTRUCTURES FOR HEMT LSI

被引：5

作者：

ITOH, H

TANAKA, H

OHORI, T

KASAI, K

MITANI, E

SUZUKI, M

KOMENO, J

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1989年 / 28卷 / 10期

关键词：

D O I：

10.1143/JJAP.28.L1693

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1693 / L1695

页数：3

共 7 条

[1] A NEW VERSATILE, LARGE SIZE MOVPE REACTOR [J].

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[2] LARGE-SCALE MOVPE GROWTH OF GAAS AND ALGAAS LAYERS [J].

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VENDURA, GJ ;

YEH, YCM .

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[3] HIGHLY UNIFORM GROWTH OF GAAS AND ALGAAS BY LARGE-CAPACITY MOCVD REACTOR [J].

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MIZUGUCHI, K ;

OCHI, S ;

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[4] UNIFORM (AL)GAAS CRYSTAL-GROWTH AND MICROWAVE HIFETS GROWN BY BARREL-REACTOR MOCVD [J].

NAKAMURA, F ;

KAWAI, H .

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[5] GATE-LENGTH DEPENDENCE OF THE SPEED OF SSI CIRCUITS USING SUBMICROMETER SELECTIVELY DOPED HETEROSTRUCTURE TRANSISTOR TECHNOLOGY [J].

SHAH, NJ ;

PEI, SS ;

TU, CW ;

TIBERIO, RC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :543-547

[6] MULTIWAFER GROWTH OF HEMT LSI QUALITY ALGAAS/GAAS HETEROSTRUCTURES BY MOCVD [J].

TANAKA, H ;

ITOH, H ;

OHORI, T ;

TAKIKAWA, M ;

KASAI, K ;

TAKECHI, M ;

SUZUKI, M ;

KOMENO, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09) :L1456-L1458

[7] SIMULATION AND MEASUREMENT OF C/V DOPING PROFILES IN MULTILAYER STRUCTURES [J].

WHITEAWAY, JEA .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1983, 130 (04) :165-170

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