BALLISTIC TRANSPORT IN HOT-ELECTRON TRANSISTORS

被引：5

作者：

XU, JM

SHUR, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339223

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3816 / 3820

页数：5

共 16 条

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[2]

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[5]

HAYES JR, 1986, 18TH P C SOL STAT DE, P331

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[7] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J].

HEIBLUM, M .

SOLID-STATE ELECTRONICS, 1981, 24 (04) :343-366

[8] BALLISTIC ELECTRON-TRANSPORT IN SEMICONDUCTORS [J].

HESS, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) :937-940

[9] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J].

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[10] THE PROBABILITY FOR BALLISTIC ELECTRON MOTION IN N-GAAS [J].

LEE, J .

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