PHOTOCAPACITANCE SPECTROSCOPY OF SURFACE-STATES ON INDIUM-PHOSPHIDE PHOTOELECTRODES

被引：19

作者：

GOODMAN, CE

WESSELS, BW

ANG, PGP

机构：

[1] NORTHWESTERN UNIV,MAT RES CTR,EVANSTON,IL 60201

[2] ELTRON RES INC,NAPERVILLE,IL 60540

来源：

APPLIED PHYSICS LETTERS | 1984年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.95251

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：442 / 444

页数：3

共 8 条

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[2]

ANG PGP, 1984, P WORLD HYDROGEN C

[3] INP SURFACE-STATES AND REDUCED SURFACE RECOMBINATION VELOCITY [J].

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APPLIED PHYSICS LETTERS, 1983, 43 (02) :174-176

[4] CHEMICALLY-INDUCED INTERFACE STATES IN PHOTO-ELECTROCHEMICAL CELLS [J].

BUTLER, MA ;

GINLEY, DS .

APPLIED PHYSICS LETTERS, 1983, 42 (07) :582-584

[5] FUNDAMENTALS OF JUNCTION MEASUREMENTS IN THE STUDY OF DEEP ENERGY-LEVELS IN SEMICONDUCTORS [J].

GRIMMEISS, HG ;

OVREN, C .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1981, 14 (09) :1032-1042

[6] ELECTROCHEMICAL PHOTOCAPACITANCE SPECTROSCOPY - A NEW METHOD FOR CHARACTERIZATION OF DEEP LEVELS IN SEMICONDUCTORS [J].

HAAK, R ;

OGDEN, C ;

TENCH, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :891-893

[7] ELECTROCHEMICAL SOLAR-CELLS [J].

HELLER, A .

SOLAR ENERGY, 1982, 29 (02) :153-162

[8]

Heller A., 1981, ACS SYM SER, V146, P57

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