LITTLE-PARKS AND AHARONOV-BOHM OSCILLATIONS IN FRACTIONAL HALL REGIME - MANIFESTATION OF CHERN-SIMONS GAUGE FLUX

被引:3
作者
FENG, SC
ZHANG, SC
机构
[1] IBM CORP, ALMADEN RES CTR, DIV RES, SAN JOSE, CA 95120 USA
[2] STANFORD UNIV, DEPT PHYS, STANFORD, CA 94305 USA
关键词
D O I
10.1103/PhysRevLett.71.3533
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that the recently developed Chern-Simons gauge theory for fractional quantum Hall effect leads naturally to a striking prediction that an applied gate voltage coupled to an isolated region in a two-dimensional electron gas can induce Little-Parks oscillations of the longitudinal conductance in the quantum Hall devices at odd denominator filling fractions. For even denominator filling fractions, the Chern-Simons fermions are in a Fermi liquid state, and the conductance fluctuations are similar to the Aharonov-Bohm conductance oscillations of a mesoscopic metal.
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页码:3533 / 3536
页数:4
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