EPITAXIAL-GROWTH OF SI-GE LAYERS ON SI SUBSTRATES BY PLASMA DISSOCIATION OF SIH4 AND GEH4 MIXTURE

[1] DEFECTS IN EPITAXIAL LAYERS OF SILICON-GERMANIUM GROWN ON SILICON SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 254 - &

[2] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[3] CHU WK, 1978, BACKSCATTERING, P59

[4] DUCHEMIN MJP, 1980, J ELECTROCHEM SOC, V125, P637

[5] LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1411 - &

[6] Morgan D. V., 1971, Radiation Effects, V8, P51, DOI 10.1080/00337577108231009

[7] MORGAN DV, 1973, CHANNELING, P40

[8] OLEZEC GM, 1973, J ELECTROCHEM SOC, V120, P554

[9] Seeger K., 1973, SEMICONDUCTOR PHYSIC, P230

[10] DEPOSITION OF POLYCRYSTALLINE SILICON BY PYROLYSIS OF SILANE IN ARGON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 701 - 706

[1] DEFECTS IN EPITAXIAL LAYERS OF SILICON-GERMANIUM GROWN ON SILICON SUBSTRATES [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 254 - &

[2] INTRINSIC OPTICAL ABSORPTION IN GERMANIUM-SILICON ALLOYS [J]. PHYSICAL REVIEW, 1958, 109 (03): : 695 - 710

[3] CHU WK, 1978, BACKSCATTERING, P59

[4] DUCHEMIN MJP, 1980, J ELECTROCHEM SOC, V125, P637

[5] LOW-ENERGY ELECTRON-DIFFRACTION STUDY OF SURFACE REACTIONS OF GERMANIUM WITH OXYGEN AND WITH IODINE .2. [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (05) : 1411 - &

[6] Morgan D. V., 1971, Radiation Effects, V8, P51, DOI 10.1080/00337577108231009

[7] MORGAN DV, 1973, CHANNELING, P40

[8] OLEZEC GM, 1973, J ELECTROCHEM SOC, V120, P554

[9] Seeger K., 1973, SEMICONDUCTOR PHYSIC, P230

[10] DEPOSITION OF POLYCRYSTALLINE SILICON BY PYROLYSIS OF SILANE IN ARGON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) : 701 - 706