DETERMINATION OF THE COMPOSITION OF STRAINED INGAASP LAYERS ON INP SUBSTRATES USING PHOTOREFLECTANCE AND DOUBLE-CRYSTAL X-RAY-DIFFRACTOMETRY

被引:18
作者
FLEMISH, JR [1 ]
SHEN, H [1 ]
JONES, KA [1 ]
DUTTA, M [1 ]
BAN, VS [1 ]
机构
[1] EPITAXX INC,PRINCETON,NJ 08540
关键词
D O I
10.1063/1.349452
中图分类号
O59 [应用物理学];
学科分类号
摘要
Determining the composition of strained InGaAsP films through measurements of the lattice spacings and band-gap energies (E(g)) requires converting the measured values to ones which would correspond to unstrained material. In strained layers the lattice constants perpendicular and parallel to the growth plane can vary significantly from the relaxed value, and the optically measured E(g) is affected by a strain-induced splitting of the valence band and a shifting of the direct gap energy. By combining double-crystal x-ray data with room-temperature photoreflectance results, we determine the InGaAsP composition accurately using an iterative procedure. Film compositions calculated using strain adjusted values of E(g) agree with those determined by energy dispersive spectroscopy to within 1-2 at.%, whereas if energy shifts are not considered, the error approaches 10 at.% for strain on the order of 0.4%.
引用
收藏
页码:2152 / 2155
页数:4
相关论文
共 26 条
[1]   GROWTH AND CHARACTERIZATION OF LIQUID-PHASE EPITAXIAL INAS1-XPX [J].
ANTYPAS, GA ;
YEP, TO .
JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3201-&
[2]   ENERGY BAND-GAP SHIFT WITH ELASTIC STRAIN IN GAXIN1-XP EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES [J].
ASAI, H ;
OE, K .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2052-2056
[3]  
ASPNES DE, 1980, HDB SEMICONDUCTORS, V2, P126
[4]   MISFIT STRESS IN INGAAS/INP HETEROEPITAXIAL STRUCTURES GROWN BY VAPOR-PHASE EPITAXY [J].
CHU, SNG ;
MACRANDER, AT ;
STREGE, KE ;
JOHNSTON, WD .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) :249-257
[5]   PHOTOREFLECTANCE STUDY OF GALLIUM-ARSENIDE GROWN ON SI [J].
DUTTA, M ;
SHEN, H ;
VERNON, SM ;
DIXON, TM .
APPLIED PHYSICS LETTERS, 1990, 57 (17) :1775-1777
[6]   ALTERING THE COMPOSITION OF INGAASP GROWN BY THE HYDRIDE TECHNIQUE BY INTRODUCING HCL DOWNSTREAM [J].
FLEMISH, JR ;
JONES, KA ;
TRIPATHI, A ;
BAN, VS ;
PARK, CH .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (05) :1427-1431
[7]   DETERMINATION OF LATTICE-CONSTANT OF EPITAXIAL LAYERS OF III-V COMPOUNDS [J].
HORNSTRA, J ;
BARTELS, WJ .
JOURNAL OF CRYSTAL GROWTH, 1978, 44 (05) :513-517
[8]   UNAMBIGUOUS IDENTIFICATION OF HEAVY-HOLE AND LIGHT-HOLE STATES IN THE PHOTOREFLECTANCE OF INXGA1-XAS/GAAS HETEROSTRUCTURES [J].
KSENDZOV, A ;
SHEN, H ;
POLLAK, FH ;
BOUR, DP .
SOLID STATE COMMUNICATIONS, 1990, 73 (01) :11-14
[9]   EFFECT OF MISMATCH STRAIN ON BAND-GAP IN III-V SEMICONDUCTORS [J].
KUO, CP ;
VONG, SK ;
COHEN, RM ;
STRINGFELLOW, GB .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5428-5432
[10]   LATTICE MISMATCH STUDY OF LPE-GROWN INGAPAS ON (001)-INP USING X-RAY DOUBLE-CRYSTAL DIFFRACTION [J].
MATSUI, J ;
ONABE, K ;
KAMEJIMA, T ;
HAYASHI, I .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :664-667